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| CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features * * * * VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 1 2 3 3 1 : Gate 2 : Collector 3 : Emitter 4 : Collector Applications Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers) Maximum Ratings (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg Ratings 900 20 30 60 120 40 200 - 40 to +150 - 40 to +150 Unit V V V A A A W C C Conditions VGE = 0 V VCE = 0 V VCE = 0 V Tc = 25C Rev.1.00, Aug.20.2004, page 1 of 5 CT60AM-18C Electrical Characteristics (Unless otherwise specified, Tj = 25C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Notes: 1 Selected value Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Ciss Coss Crss td(on) tr td(off) tf Etail Itail VEC trr Rth(j-c) Rth(j-c) Min. 1000not e1 Typ. -- -- -- 4.0 2.0 5000 125 85 0.05 0.12 0.30 0.25 0.6 6 -- 0.5 -- -- Max. -- 1 0.5 6.0 2.7 -- -- -- -- -- -- -- 1.0 12 3 2 0.625 4.0 Unit V mA A V V pF pF pF s s s s mJ/pls A V s C/W C/W Test conditions IC = 1 mA, VGE = 0 V VCE = 900 V, VGE = 0 V VGE = 20 V, VCE = 0 V IC = 6 mA, VCE = 10 V IC = 60 A, VCE = 15 V VCE = 25 V, VGE = 0 V, f = 1MHz IC = 60 A, Resistive loads, VCC = 300 V, VGE = 15 V, RG = 10 ICP = 60 A, Tj = 125C, dv/dt = 200 V/s, Single-device voltage resonance circuit IE = 60 A, VGE = 0 V IE = 60 A, di/dt = 20 A/s Junction to case Junction to case -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Rev.1.00, Aug.20.2004, page 2 of 5 CT60AM-18C Performance Curves Collector-Emitter Saturation Voltage VCE(sat) (V) Collector Current vs. Collector-Emitter Voltage (Typical) 200 Collector-Emitter Saturation Voltage vs. Gate-Emitter Voltage (Typical) 5 PC = 200W Tc = 25C Pulse Test Collector Current IC (A) 160 4 15V 120 10V 9V 3 IC = 120A 60A 30A 15A 80 VGE = 20V 2 8V 7V 40 1 0 0 1 2 3 4 5 0 Tc = 25C Pulse Test 0 4 8 12 16 20 Collector-Emitter Voltage VCE (V) Collector Current vs. Gate-Emitter Voltage (Typical) 200 Gate-Emitter Voltage VGE (V) Capacitance vs. Collector-Emitter Voltage (Typical) 104 7 5 3 2 103 7 5 3 2 VCE = 5V Pulse Test Collector Current IC (A) Capacitance C (pF) 160 Cies 120 80 25C 40 0 0 4 8 12 16 20 Coes 102 7 5 Tj = 25C 3 Cres 2 VGE = 0V f = 1MHz 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Gate-Emitter Voltage VGE (V) Collector-Emitter Voltage VCE (V) Switching Time vs. Gate Resistance (Typical) Tj = 25C 2V CC = 300V VGE = 15V 103 IC = 60A 7 5 3 2 102 7 5 30 10 23 tf td(off) tr Switching Characteristics (Typical) 103 7 5 3 Switching Time (ns) 3 2 102 7 5 3 2 101 0 10 23 5 7 101 td(off) tf tr td(on) Tj = 25C VCC = 300V VGE = 15V RG = 10 23 5 7 102 Switching Time (ns) td(on) 5 7 101 23 5 7 102 Collector Current IC (A) Gate Resistance RG () Rev.1.00, Aug.20.2004, page 3 of 5 CT60AM-18C Gate-Emitter Voltage vs. Gate Charge Characteristic (Typical) 20 Emitter Current vs. Emitter-Collector Voltage (Typical) 80 Gate-Emitter Voltage VGE (V) IC = 60A Tj = 25C VGE = 0V Pulse Test 16 Emitter Current IE (A) 64 12 VCE = 250V 400V 600V 48 8 32 Tc = 25C 4 16 0 0 80 160 240 320 400 0 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) Emitter-Collector Voltage VEC (V) Collector-Emitter Breakdown Voltage V(BR)CES (tC) Collector-Emitter Breakdown Voltage V(BR)CES (25C) Gate-Emitter Threshold Voltage VGE(th) (V) Gate-Emitter Threshold Voltage vs. Junction Temperature (Typical) 7.0 Collector-Emitter Breakdown Voltage vs. Junction Temperature (Typical) 1.4 VCE = 400V IC = 20mA 6.0 VGE = 0V IC = 1mA 1.2 5.0 1.0 4.0 0.8 3.0 0.6 2.0 -50 0 50 100 150 0.4 -50 0 50 100 150 Junction Temperature Tj (C) Junction Temperature Tj (C) Transient Thermal Impedance Zth( j - c ) (C/W) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 100 Single pulse 7 5 3 2 2 Transient Thermal Impedance Zth( j - c ) (C/W) IGBT Transient Thermal Impedance Characteristics Diode Transient Thermal Impedance Characteristics 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 101 7 Single pulse 5 3 2 100 7 5 3 2 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 5 710-5 2 3 5 710-4 2 3 5 710-3 10-2 5 710-5 2 3 5 710-4 2 3 5 710-3 10-2 10-2 10-2 Pulse Width tw (S) Pulse Width tw (S) Rev.1.00, Aug.20.2004, page 4 of 5 CT60AM-18C Package Dimensions TO-3PL EIAJ Package Code JEDEC Code Mass (g) (reference value) 9.8 Lead Material Cu alloy 20.5 max 5 2 3.2 6 2 1 0.2 20.8 0.8 2.5 26 0.6 3 5.45 5.45 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max 4.0 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example CT60AM-18C CT60AM-18C-AD Straight type Plastic Magazine (Tube) 25 Type name Lead form Plastic Magazine (Tube) 25 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. 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